• DocumentCode
    945673
  • Title

    Modification of zinc diffusion profiles in GaAs by proton irradiation

  • Author

    Houghton, A.J. ; Tuck, Brian ; Stephens, K.G.

  • Author_Institution
    University of Nottingham, Department of Electrical and Electronic Engineering, Nottingham, UK
  • Volume
    14
  • Issue
    6
  • fYear
    1978
  • Firstpage
    185
  • Lastpage
    186
  • Abstract
    A technique is described which gives control over the dopant distribution for zinc diffusion in GaAs. Experimental profiles are presented which show that both dopant depth and concentration can be increased by prior H+-irradiation. The zinc atom concentration profiles are shown to correspond with the carrier (hole) profiles.
  • Keywords
    III-V semiconductors; diffusion in solids; doping profiles; gallium arsenide; proton effects; GaAs; Zn diffusion profiles; dopant distribution; proton irradiation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780123
  • Filename
    4240970
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=945673