Planar, ion implanted, high voltage 6H-SiC P-N junction diodes

Author

Shenoy, Praveen M. ; Baliga, Jayant B.

Author_Institution

Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA

Volume

16

Issue

10

fYear

1995

Firstpage

454

Lastpage

456

Abstract

Planar, high voltage (800 V) P-N junction diodes have been fabricated for the first time on N-type 6H-SiC by room temperature boron implantation through a pad oxide deposited within windows etched in an LPCVD field oxide. All the diodes showed excellent rectification with leakage currents of less than 10 nA (/spl sim/5/spl times/10/sup -5/ A/cm/sup 2/) until avalanche breakdown. It was found that the breakdown voltage increases with junction depth. The reverse recovery time (t/sub rr/) was measured to be 50 ns for the 800 V diode from which an effective minority carrier life time of 12.5 ns was extracted.<>

Keywords

avalanche breakdown; carrier lifetime; ion implantation; leakage currents; minority carriers; power semiconductor diodes; rectifiers; semiconductor materials; silicon compounds; solid-state rectifiers; 10 nA; 12.5 ns; 50 ns; 800 V; HV diodes; LPCVD field oxide; N-type 6H-SiC; SiC; avalanche breakdown; breakdown voltage; effective minority carrier lifetime; high voltage p-n junction diodes; leakage currents; pad oxide; planar ion implanted diodes; rectification; reverse recovery time; room temperature B implantation; Annealing; Boron; Etching; Furnaces; Implants; P-n junctions; Semiconductor diodes; Temperature; Thermal conductivity; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.464815

Filename

464815