Title :
Mobility profiling of f.e.t. structures
Author :
Jay, P.R. ; Crossley, I. ; Cardwell, M.J.
Author_Institution :
Plessey Company Limited, Allen Clark Research Centre, Towcester, UK
Abstract :
Several techniques have been used to obtain electron mobility profiles in GaAs f.e.t. structures. In particular, mobilities have been measured near the interface between the active n layer and the underlying high resistivity material. The most detailed information in this region has been obtained using a Schottky-gated Van der Pauw technique.
Keywords :
carrier mobility; field effect transistors; GaAs FET; Schottky gated Van der Pauw technique; electron mobility profiles;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780127
