Combination of YBa/sub 2/Cu/sub 3/O/sub 7- delta / with semiconducting substrates

Author

Prusseit, W. ; Corsepius, S. ; Utz, B. ; Baudenbacher, F. ; Hirata, K. ; Berberich, P. ; Kinder, H. ; Eibl, O.

Author_Institution

Dept. of Phys., Tech. Univ. Munchen, Garching, Germany

Volume

3

Issue

1

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

1070

Lastpage

1073

Abstract

Epitaxial YBa/sub 2/Cu/sub 3/O/sub 7- delta / films were grown on silicon and gallium arsenide substrates. The common problem of strong interdiffusion at the elevated deposition temperatures was solved by employing appropriate buffer layers. The large differential thermal expansion between silicon and YBa/sub 2/Cu/sub 3/O/sub 7- delta /, which can lead to a fracture of thicker films, was addressed by improving the fracture toughness of the films. Arsenic contamination of films on GaAs, originating from the sides and the back of the wafer, was completely solved by a proper encapsulation, yielding YBa/sub 2/Cu/sub 3/O/sub 7- delta / films comparable to those on standard substrates.<>

Keywords

barium compounds; chemical interdiffusion; fracture toughness; high-temperature superconductors; superconducting epitaxial layers; thermal expansion; vapour phase epitaxial growth; yttrium compounds; GaAs; Si; YBa/sub 2/Cu/sub 3/O/sub 7- delta /; buffer layers; differential thermal expansion; elevated deposition temperatures; encapsulation; epitaxial layers; fracture; fracture toughness; high temperature superconductors; interdiffusion; semiconducting substrates; Buffer layers; Gallium arsenide; Semiconductivity; Semiconductor films; Silicon; Substrates; Superconducting films; Temperature; Thermal expansion; Thermal stresses;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.233886

Filename

233886