Title :
An X band f.e.t. oscillator with low f.m. noise
Author :
Finlay, H.J. ; Joshi, J.S. ; Cripps, Steve C.
Author_Institution :
Plessey Company Limited, Allen Clark Research Centre, Towcester, UK
Abstract :
Some f.m. noise results on GaAs f.e.t. oscillators using unencapsulated devices are presented. The f.m. noise results show an improvement of nearly 20 dB on similar unstabilised low-Q GaAs f.e.t. oscillators.
Keywords :
field effect transistor circuits; microwave oscillators; noise; solid-state microwave circuits; GaAs FET oscillator; X-band FET oscillator; low FM noise;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780132
