• DocumentCode
    945857
  • Title

    In-situ RHEED-TRAXS analysis during the preparation of YBa/sub 2/Cu/sub 3/O/sub 7-x/ thin films

  • Author

    Aoki, Y. ; Kamei, M. ; Ogota, S. ; Usui, T. ; Morishita, T.

  • Author_Institution
    Superconductivity Res. Lab., ISTEC, Tokyo, Japan
  • Volume
    3
  • Issue
    1
  • fYear
    1993
  • fDate
    3/1/1993 12:00:00 AM
  • Firstpage
    1598
  • Lastpage
    1600
  • Abstract
    Reflection high-energy electron diffraction (RHEED) with total-reflection-angle X-ray spectroscopy (TRAXS) has been applied to the chemical and structure analysis during preparation of YB/sub 2/Cu/sub 3/O/sub 7-x/ (YBCO) films. The characteristic X-rays of YL alpha , BaL alpha , and CuK alpha emitted even from 0.8-AA-thick YBCO were clearly observed by TRAXS. In addition, the surface sensitivity of this method was found to be comparable to or higher than that of Auger electron spectroscopy. From the RHEED observation, it was revealed that the lattice spacing drastically changes from 4.09 AA to 3.8 AA at a mean thickness of less than one unit cell of YBCO at the early growth stage.<>
  • Keywords
    Auger effect; X-ray chemical analysis; barium compounds; high-temperature superconductors; reflection high energy electron diffraction; superconducting thin films; surface structure; vapour deposition; yttrium compounds; 0.8 angstroms; Auger electron spectroscopy; BaL alpha; CuK alpha; MgO substrate; YBa/sub 2/Cu/sub 3/O/sub 7-x/ thin films; YL alpha; characteristic X-rays; chemical analysis; high temperature superconductors; in-situ RHEED-TRAXS analysis; lattice spacing; reactive coevaporation; reflection high energy electron diffraction; structure analysis; surface sensitivity; total-reflection-angle X-ray spectroscopy; Chemical analysis; Diffraction; Dispersion; Energy management; Lattices; Substrates; Surface finishing; Transistors; X-rays; Yttrium barium copper oxide;
  • fLanguage
    English
  • Journal_Title
    Applied Superconductivity, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1051-8223
  • Type

    jour

  • DOI
    10.1109/77.233898
  • Filename
    233898