• DocumentCode
    945867
  • Title

    Planar indium-diffused lead telluride detector arrays

  • Author

    Gooch, C.H. ; Tarry, H.A. ; Bottomley, R.C. ; Astles, M.G. ; Waldock, B.J.

  • Author_Institution
    Royal Signals and Radar Establishment, Baldock, UK
  • Volume
    14
  • Issue
    7
  • fYear
    1978
  • Firstpage
    209
  • Lastpage
    210
  • Abstract
    Lead telluride detector arrays have been made by diffusing indium into arsenic-doped p-type lead telluride. Planar devices have a resistance-area product R0A ¿ 10 ¿ cm2 at 180 K and a black body detectivity (D* 500 K) ¿ 6×109 cm Hz¿ W¿1 a typical array showing a responsivity variation of ±20%. The temperature variation of R0A is consistent with an abrupt junction model with an Auger-limited lifetime.
  • Keywords
    photodetectors; Auger limited lifetime; PbTe:In; abrupt junction model; black body detectivity; planar detector arrays; responsivity variation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780141
  • Filename
    4240999