DocumentCode
945867
Title
Planar indium-diffused lead telluride detector arrays
Author
Gooch, C.H. ; Tarry, H.A. ; Bottomley, R.C. ; Astles, M.G. ; Waldock, B.J.
Author_Institution
Royal Signals and Radar Establishment, Baldock, UK
Volume
14
Issue
7
fYear
1978
Firstpage
209
Lastpage
210
Abstract
Lead telluride detector arrays have been made by diffusing indium into arsenic-doped p-type lead telluride. Planar devices have a resistance-area product R0A ¿ 10 ¿ cm2 at 180 K and a black body detectivity (D* 500 K) ¿ 6Ã109 cm Hz¿ W¿1 a typical array showing a responsivity variation of ±20%. The temperature variation of R0A is consistent with an abrupt junction model with an Auger-limited lifetime.
Keywords
photodetectors; Auger limited lifetime; PbTe:In; abrupt junction model; black body detectivity; planar detector arrays; responsivity variation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19780141
Filename
4240999
Link To Document