Title :
Observation of two types of trapping centers in thin film transistors using charge pumping technique
Author :
Balasinski, A. ; Worley, J. ; Huang, K.W. ; Walters, J. ; Liou, F.-T.
Author_Institution :
SGS-Thomson Microelectron., Carrollton, TX, USA
Abstract :
Using voltage- and frequency-dependent charge pumping techniques, we observed two types of trapping centers with different densities, cross-sections, and trapped charges at the polysilicon-(TEOS) gate oxide interface in thin film transistors (TFT´s). These observations can be explained in terms of nonuniform energetic or spatial distribution of the traps due to the channel polysilicon grain structure or related to the process-induced interface defects. Mechanisms are discussed.<>
Keywords :
electron traps; thin film transistors; Si-SiO/sub 2/; charge pumping; cross-sections; interface defects; polysilicon grain structure; polysilicon-TEOS gate oxide interface; thin film transistors; trapping centers; Charge pumps; Current measurement; Frequency measurement; Grain boundaries; Passivation; Pulse measurements; Silicon; Thin film devices; Thin film transistors; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
