Title :
Low-temperature operation of SiGe p-n-p HBTs
Author :
Crabbe ; Harame, D.L. ; Meyerson, B.S. ; Stork, J.M.C. ; Sun, Jack Y.-C
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY
fDate :
11/1/1992 12:00:00 AM
Abstract :
Summary form only given. SiGe-base p-n-p transistors with good current gain (100-200) and high cutoff frequency (>50 GHz) were operated from room temperature down to 85 K with no degradation in either current gain or cutoff frequency. This demonstrates that proper device design can alleviate the performance degradation associated with the large valence-band discontinuity in the base-collector junction (valence-band barrier effects). A peak cutoff frequency of 61 GHz for Vbc=2 V was obtained at 85 K compared to 59 GHz at 298 K
Keywords :
Ge-Si alloys; cryogenics; heterojunction bipolar transistors; semiconductor materials; solid-state microwave devices; 59 to 61 GHz; 85 to 298 K; SiGe-base; current gain; cutoff frequency; low temperature operation; p-n-p transistors; valence-band barrier effects; Annealing; Cutoff frequency; Degradation; Doping; Electron devices; Germanium silicon alloys; Heterojunction bipolar transistors; P-n junctions; Silicon germanium; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
