• DocumentCode
    946172
  • Title

    A new method of low-temperature zinc diffusion into GaAs and GaP using anodic oxides

  • Author

    Sakai, Tadashi ; Suzuki, Takumi ; Hasegawa, Hiroshi

  • Author_Institution
    Hokkaido University, Department of Electrical Engineering, Faculty of Engineering, Sapporo, Japan
  • Volume
    14
  • Issue
    8
  • fYear
    1978
  • Firstpage
    248
  • Lastpage
    249
  • Abstract
    A new low-temperature selective zinc-diffusion process into GaAs and GaP, is described. It involves a room temperature anodic oxidation for growth of oxide films containing zinc, and a subsequent heating for diffusion, using the oxide as the diffusion source. Process details and junction depth data are presented.
  • Keywords
    III-V semiconductors; diffusion in solids; gallium arsenide; gallium compounds; semiconductor doping; zinc; GaAs; GaP; anodic oxides; junction depth data; low temperature Zn diffusion;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780168
  • Filename
    4241040
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=946172