Title :
A new method of low-temperature zinc diffusion into GaAs and GaP using anodic oxides
Author :
Sakai, Tadashi ; Suzuki, Takumi ; Hasegawa, Hiroshi
Author_Institution :
Hokkaido University, Department of Electrical Engineering, Faculty of Engineering, Sapporo, Japan
Abstract :
A new low-temperature selective zinc-diffusion process into GaAs and GaP, is described. It involves a room temperature anodic oxidation for growth of oxide films containing zinc, and a subsequent heating for diffusion, using the oxide as the diffusion source. Process details and junction depth data are presented.
Keywords :
III-V semiconductors; diffusion in solids; gallium arsenide; gallium compounds; semiconductor doping; zinc; GaAs; GaP; anodic oxides; junction depth data; low temperature Zn diffusion;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780168
