Gate controlled bulk-barrier mechanism in an MOS power transistor

A double-gate thin base MOS structure with a lightly doped drain is characterised and shown to have potential for low on-resistance designs. The drain current is controlled by a novel gate-controlled barrier mechanism in the base, such that beyond threshold the whole base becomes strongly inverted. This `bulk¿ inversion gives rise to a `wide¿ channel which will have a much lower resistance than the corresponding conventional surface inversion layer. A simple pseudo-one-dimensional analysis of the I/V characteristics is developed and is validated by a full two-dimensional solution of the semiconductor transport equations.