DocumentCode
946211
Title
A GaAs MESFET Mixer with Very Low Intermodulation
Author
Maas, Stephen A.
Volume
35
Issue
4
fYear
1987
fDate
4/1/1987 12:00:00 AM
Firstpage
425
Lastpage
429
Abstract
This paper describes the design and performance of a new type of resistive mixer, which uses the channel resistance of a GaAs MESFET to achieve frequency mixing. Because this resistance is highly linear, very low intermodulation results. The mixer can be analyzed via existing mixer theory, with good agreement with measured performance. At 10 dBm LO power, the X-band mixer achieves 6.5 dB conversion loss, 6.6 dB noise figure, 21.5 dBm output third-order intermodulation intercept point, and 9.1 dBm 1-dB compression point.
Keywords
Frequency; Gallium arsenide; MESFETs; Mixers; Noise figure; Power generation; RF signals; Resistors; Schottky diodes; Temperature sensors;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/TMTT.1987.1133665
Filename
1133665
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