Title :
GaAs m.e.s.f.e.t. technology and characteristics for optical communication systems
Author :
Dekkers, J.J.M. ; Filensky, W. ; Beneking, H.
Author_Institution :
Aachen Technical University, Institute of Semiconductor Electronics, Aachen, West Germany
Abstract :
For pulse regeneration applications GaAs m.e.s.f.e.t.s with low pinch-off voltages are desirable. The technology and the dependence of the input/output pulse width ratio on the bias voltage are described. The pulse behaviour of a two-stage sharpener is shown and the block diagram of an optical repeater station is proposed.
Keywords :
Schottky gate field effect transistors; field effect transistor circuits; optical communication equipment; pulse shaping circuits; repeaters; GaAs MESFET technology; bias voltage; input/output pulse width ratio; optical communication systems; optical repeater station; pulse regeneration; two stage sharpener;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780185
