Title :
Electron mobilities and high-field drift velocities in strained silicon on silicon-germanium substrates
Author :
Vogelsang, Thomas ; Hofmann, Karl Rudiger
Author_Institution :
Siemens AG, Munich
fDate :
11/1/1992 12:00:00 AM
Abstract :
Summary form only given. The authors have performed a detailed analysis of the in-plane electron transport in strained Si on Si1-x Gex with a Monte Carlo method. They present data on electron drift mobilities and velocities in the whole range from low to very high electric fields that can serve as a reference for the transport in modulation-doped channels. The results demonstrate significant improvements of the in-plane electron drift velocity in strained Si on Si1-xGex compared to bulk Si in the low-field and the high-field regions both at 300 and at 77 K. This advantage should contribute considerably to the high-performance potential of devices based on modulation-doped Si/SiGe heterostructures such as n-channel quantum-well MODFETs and MOSFETs
Keywords :
Ge-Si alloys; Monte Carlo methods; carrier mobility; electrical conductivity of crystalline semiconductors and insulators; elemental semiconductors; high field effects; semiconductor materials; silicon; substrates; 300 K; 77 K; MODFETs; MOSFETs; Monte Carlo method; Si-SiGe; Si1-xGex substrates; electric fields; electron drift mobilities; heterostructures; high-field drift velocities; in-plane electron transport; modulation-doped channels; n-channel quantum-well; strained Si; Acoustic scattering; Electrodes; Electron mobility; Equations; Germanium silicon alloys; Impurities; Optical scattering; Phonons; Silicon germanium; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
