Title :
Selectively ion implanted Gunn-f.e.t. integrated circuits for pulse regenerator
Author :
Mizutani, Takashi ; Ishida, Satoru ; Kurumada, Katsuhiko ; Ohmori, Masamichi
Author_Institution :
NTT, Semiconductor Device Section, Electrical Communication Laboratories, Musashino, Japan
Abstract :
A planar GaAs integrated Gunn-effect device and f.e.t. connected in cascade have been fabricated using selective sulphur-ion implantation. High-speed pulse regeneration and pulse amplification have been realised under d.c. bias condition. Output voltage and voltage gain of the regenerated pulse of 1 ns width were 1.7 V and 18.6 dB, respectively.
Keywords :
ion implantation; monolithic integrated circuits; pulse amplifiers; pulse generators; FET; planar GaAs integrated Gunn effect device; pulse amplification; pulse regenerator; selective ion implantation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780200
