• DocumentCode
    946483
  • Title

    Selectively ion implanted Gunn-f.e.t. integrated circuits for pulse regenerator

  • Author

    Mizutani, Takashi ; Ishida, Satoru ; Kurumada, Katsuhiko ; Ohmori, Masamichi

  • Author_Institution
    NTT, Semiconductor Device Section, Electrical Communication Laboratories, Musashino, Japan
  • Volume
    14
  • Issue
    10
  • fYear
    1978
  • Firstpage
    294
  • Lastpage
    295
  • Abstract
    A planar GaAs integrated Gunn-effect device and f.e.t. connected in cascade have been fabricated using selective sulphur-ion implantation. High-speed pulse regeneration and pulse amplification have been realised under d.c. bias condition. Output voltage and voltage gain of the regenerated pulse of 1 ns width were 1.7 V and 18.6 dB, respectively.
  • Keywords
    ion implantation; monolithic integrated circuits; pulse amplifiers; pulse generators; FET; planar GaAs integrated Gunn effect device; pulse amplification; pulse regenerator; selective ion implantation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780200
  • Filename
    4241084
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=946483