Title :
New contact resistance profiling method for the assessment of III--V alloy multilayer structures
Author :
Goodfellow, R.C. ; Carter, A.C. ; Davis, Ronald W. ; Hill, Christopher
Author_Institution :
Plessey Company Ltd., Allen Clark Research Centre, Towcester, UK
Abstract :
A practical technique for the assessment of multilayer III--V structures is described which is based on the measurement of the contact resistance between a tungsten carbide probe and an angle lapped sample surface. The technique has been applied to homostructure and double heterostructure layers of GaAs, GaAlAs, InP and GaInAsP and quantitative information on the doping profiles has been obtained by calibration against binary material samples of known impurity levels.
Keywords :
III-V semiconductors; contact resistance; doping profiles; p-n heterojunctions; p-n homojunctions; GaAlAs; GaAs; GaInAsP; III-V alloy multilayer structures; InP; contact resistance profiling method; doping profiles; double heterostructure layers; homostructure layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780223
