Title :
A note on the evaluation of Schottky diode parameters in the presence of an interfacial layer
Author :
Ashok, S. ; Borrego, J.M. ; Gutmann, R.J.
Author_Institution :
Rensselaer Polytechnic Institute, Electrical & Systems Engineering Department, Troy, USA
Abstract :
Metal-semiconductor barrier height and semiconductor doping concentration evaluated from room temperature current-voltage and capacitance-voltage data of Schottky barrier diodes exhibit significant error in the presence of an interfacial oxide layer of appreciable thickness (¿50 Å). The effective Richardson constant obtained from an activation energy plot of saturation current is shown to provide a sensitive indication of the presence of the interfacial layer.
Keywords :
Schottky-barrier diodes; C-V characteristics; I-V characteristics; Schottky diode parameters; activation energy plot; effective Richardson constant; interfacial layer; metal semiconductor barrier height; oxide layer; saturation current; semiconductor doping concentration;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780225
