Title :
Negative differential resistance in metal (CoSi2)/insulator (CaF2) resonant tunneling diode
Author :
Suemasu, Takashi ; Watanabe, Manabu ; Asada, Minoru ; Suzuki, Nobuhiro
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol.
fDate :
11/1/1992 12:00:00 AM
Abstract :
Summary form only given. The authors report on the first observation of negative differential resistance (NDR) in a nanometer-thick metal insulator resonant tunneling diode. As materials for the single-crystalline metal/insulator, they chose CoSi2 and CaF2 because they have the fluorite lattice structure and are lattice-matched to Si relatively well. In contrast to semiconductor or semiconductor/metal heterostructures, a triple barrier structure is necessary for the NDR because the bottom of the conduction band in bulk CoSi2 is far below the Fermi level (~13 eV) and is difficult to exceed the resonant level in conventional double-barrier structures. It is believed that the observed NDR is due to the electron resonant tunneling transport in nanometer-thick metal/insulator heterostructures
Keywords :
calcium compounds; cobalt compounds; metal-insulator boundaries; negative resistance; resonant tunnelling devices; tunnelling; CoSi2-CaF2; Fermi level; NDR; RTD; electron resonant tunneling transport; fluorite lattice structure; lattice-matched; metal/insulator heterostructures; nanometer-thick metal; negative differential resistance; resonant tunneling diode; single-crystalline metal; triple barrier structure; Insulation; Interference; Lighting; Metal-insulator structures; Metallic superlattices; Optical waveguides; Quantization; Resonant tunneling devices; Semiconductor diodes; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
