DocumentCode :
946981
Title :
Semiconductor-coupled Josephson junctions
Author :
Klapwijk, T.M. ; van Huffelen, W.M. ; Heslinga, D.R.
Author_Institution :
Dept. of Appl. Phys., Groningen Univ., Netherlands
Volume :
3
Issue :
1
fYear :
1993
fDate :
3/1/1993 12:00:00 AM
Firstpage :
2873
Lastpage :
2880
Abstract :
Superconductor-semiconductor-superconductor junctions have been studied using 50-nm-thick silicon membranes sandwiched between niobium electrodes. The normal state resistance is determined by barriers at the interfaces. The supercurrent is well described by the Kupriyanov-Lukichev theory for the proximity effect in SINIS (superconductor-insulator-normal metal-insulator-superconductor) structures, whereas the voltage-carrying state is understood as resulting from a nonthermal distribution of electrons in the semiconductor. The details of the distribution depend on elastic and Andreev scattering at the interfaces. By analogy to semiconductor heterostructures, the authors propose that these structures be called superconducting quantum wells, a concept which is applicable to other double-barrier tunnel devices as well.<>
Keywords :
elemental semiconductors; niobium; proximity effect; silicon; superconducting junction devices; type II superconductors; Kupriyanov-Lukichev theory; Nb-Si-Nb; SINIS; normal state resistance; proximity effect; semiconductor coupled Josephson junction; superconductor-insulator-normal metal-insulator-superconductor; supercurrent; Biomembranes; Electrodes; Electrons; Josephson junctions; Metal-insulator structures; Niobium; Particle scattering; Proximity effect; Silicon; Voltage;
fLanguage :
English
Journal_Title :
Applied Superconductivity, IEEE Transactions on
Publisher :
ieee
ISSN :
1051-8223
Type :
jour
DOI :
10.1109/77.234001
Filename :
234001
Link To Document :
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