Reactively sputtered niobium nitride thin films for Josephson integrated circuit application

Author

Lee, S.Y. ; Bruns, M. ; Glenn, R.D.

Author_Institution

Tektronix, Beaverton, OR, USA

Volume

3

Issue

1

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

2953

Lastpage

2957

Abstract

The properties of sputter-deposited NbN thin films were studied under changes in various deposition conditions including nitrogen flow, substrate heating, the addition of carbon impurities, and the use of an Nb underlayer. Without the underlayer, a semiconductorlike resistive behavior above the superconducting transition temperature and a wide superconducting transition were observed in the niobium nitride films, including those with transition temperatures above 15 K. With the underlayer, metallic behavior and a sharp superconducting transition temperature depended strongly on nitrogen flow and substrate heating but weakly on carbon impurities. The authors present details on the preparation and analysis of niobium nitride thin films with and without a niobium underlayer as well as the measured film characteristics.<>

Keywords

Josephson effect; niobium compounds; sputter deposition; sputtered coatings; superconducting integrated circuits; superconducting thin films; superconducting transition temperature; type II superconductors; Josephson integrated circuit; Nb underlayer; NbN thin films; deposition conditions; film preparation; metallic behavior; reactively sputtered film; substrate heating; superconducting transition temperature; wide superconducting transition; Heating; Niobium compounds; Nitrogen; Semiconductor impurities; Semiconductor thin films; Sputtering; Substrates; Superconducting films; Superconducting thin films; Superconducting transition temperature;

fLanguage

English

Journal_Title

Applied Superconductivity, IEEE Transactions on

Publisher

ieee

ISSN

1051-8223

Type

jour

DOI

10.1109/77.234021

Filename

234021