• DocumentCode
    947353
  • Title

    Gate current in complementary HFETs

  • Author

    Schuermeyer, F. ; Martinez, E. ; Shur, M. ; Grider, David

  • Author_Institution
    Wright Lab., WL/ELET, Wright Patterson AFB, OH
  • Volume
    39
  • Issue
    11
  • fYear
    1992
  • fDate
    11/1/1992 12:00:00 AM
  • Firstpage
    2647
  • Lastpage
    2648
  • Abstract
    Summary form only given. Gate current studies have been performed to optimize the performance of HFET (heterostructure field-effect transistor) circuits. Pseudomorphic AlxGa1-xAs/In yGa1-yAs n- and p-channel HFETs with x and y values up to 0.75 and 0.25, respectively, were studied. An analytical theory of the gate current in n- and p-channel HFETs, taking into account both thermionic emission and tunneling is presented
  • Keywords
    III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; semiconductor device models; tunnelling; AlxGa1-xAs-InyGa1-yAs; analytical theory; complementary HFET; gate current; heterostructure field-effect transistor; n-channel HFET; p-channel HFETs; thermionic emission; tunneling; FETs; Gallium arsenide; HEMTs; Laboratories; MESFETs; MODFETs; P-n junctions; Photonic band gap; Silicon carbide; Temperature sensors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.163501
  • Filename
    163501
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=947353