Deep traps in ideal n-InP Schottky diodes

A number of deep electron trap levels have been detected in bulk and epitaxial InP for the first time. These deep traps are located in the upper half of the bandgap, and have been observed in Schottky barrier diodes by transient capacitance spectroscopy (d.l.t.s.). The deep traps have been shown to be responsible for low frequency excess noise in the Schottky diodes.