• DocumentCode
    947364
  • Title

    Deep traps in ideal n-InP Schottky diodes

  • Author

    White, Amanda M. ; Grant, Alex J. ; Day, B.

  • Author_Institution
    Royal Signals & Radar Establishment, Great Malvern, UK
  • Volume
    14
  • Issue
    13
  • fYear
    1978
  • Firstpage
    409
  • Lastpage
    411
  • Abstract
    A number of deep electron trap levels have been detected in bulk and epitaxial InP for the first time. These deep traps are located in the upper half of the bandgap, and have been observed in Schottky barrier diodes by transient capacitance spectroscopy (d.l.t.s.). The deep traps have been shown to be responsible for low frequency excess noise in the Schottky diodes.
  • Keywords
    Schottky-barrier diodes; electron device noise; electron traps; deep electron trap levels; ideal n-InP Schottky diodes; low frequency excess noise; transient capacitance spectroscopy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780276
  • Filename
    4242554
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=947364