• DocumentCode
    947405
  • Title

    Impact ionisation ratio in In0.73Ga0.27As0.57P0.43

  • Author

    Ito, Masanori ; Kaneda, Takao ; Nakajima, Kazuo ; Toyoma, Yoshikazu ; Yamaoka, Toyoshi ; Kotani, Tsuyoshi

  • Author_Institution
    Fujitsu Laboratories Ltd., Kawasaki, Japan
  • Volume
    14
  • Issue
    14
  • fYear
    1978
  • Firstpage
    418
  • Lastpage
    419
  • Abstract
    A window structure InGaAsP avalanche photodiode (a.p.d.) has been fabricated by using liquid-phase epitaxy on (111B) InP. Multiplication characteristics show that the impact ionisation rate for electrons is larger than that for holes (¿>ß). The ionisation ratio ¿/ß was estimated to be 3¿4. A low-noise a.p.d. will be realised by a structure with electron-initiated multiplication.
  • Keywords
    III-V semiconductors; avalanche photodiodes; impact ionisation; In0.73Ga0.27As0.57P0.43; avalanche photodiode; electron initiated multiplication; impact ionisation; ionisation ratio; liquid phase epitaxy; window structure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780281
  • Filename
    4242560
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=947405