Title :
Extremely low loss 4*4 GaAs/AlGaAs optical matrix switch
Author :
Hamamoto, Kiichi ; Sugou, S. ; Komatsu, Kazuhiko ; Kitamura, Masayuki
Author_Institution :
Opto-electron. Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
A 4*4 GaAs/AlGaAs optical matrix switch with an extremely low loss of 1.6 dB has been developed. This low loss switch was achieved by layer structure modification, to reduce free-carrier absorption, reduction of plasma damage while dry etching, and an improvement in the crystal quality.<>
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; integrated optics; optical losses; optical switches; optical waveguides; 1.6 dB; 4*4 configuration; GaAs-AlGaAs; crystal quality; dry etching; free-carrier absorption; layer structure modification; low loss; optical matrix switch; photonic switching systems; plasma damage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931053
