• DocumentCode
    947562
  • Title

    Hole and electron currents in diffused P+-N-N+diodes and IIL structures

  • Author

    Roulston, D.J. ; Elsaid, M.H.

  • Author_Institution
    University of Waterloo, Waterloo, Ont., Canada
  • Volume
    65
  • Issue
    2
  • fYear
    1977
  • Firstpage
    271
  • Lastpage
    272
  • Abstract
    The hole current due to recombination in the N epitaxial layer is calculated and compared to the electron current injected into the diffused P region. A formula is given and results are compared with computed currents for both wide and narrow (e.g., IIL) structures, including heavy doping effects.
  • Keywords
    Charge carrier processes; Current density; Doping; Electrons; Epitaxial layers; Neodymium; P-i-n diodes; P-n junctions; Spontaneous emission; Substrates;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1977.10465
  • Filename
    1454734
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=947562