• DocumentCode
    947577
  • Title

    Passivated millimeter-wave silicon IMPATT diodes fabricated by ion implantation

  • Author

    Lee, D.H. ; Weller, K.P.

  • Volume
    65
  • Issue
    2
  • fYear
    1977
  • Firstpage
    272
  • Lastpage
    273
  • Abstract
    Ion implantation has been combined with planar-mesa processing techniques to realize a passivated silicon IMPATT diode for millimeter-wavelength operation. A continuous-wave output power of 100 mW was obtained at 62 GHz from a fully passivated single-drift-region p+-n-n+structure.
  • Keywords
    Current measurement; Electron devices; Gain measurement; Ion implantation; Millimeter wave technology; Millimeter wave transistors; P-i-n diodes; Silicon; Testing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1977.10467
  • Filename
    1454736
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=947577