DocumentCode
947620
Title
LaGuerre–Gaussian Emission Properties of Photonic Quantum Ring Hole-Type Lasers
Author
Ide, Kai ; Lee, S.E. ; Kim, Y.C. ; Kim, D.K. ; Kwon, O´Dae
Author_Institution
Tech. Univ. Berlin, Berlin
Volume
7
Issue
2
fYear
2008
fDate
3/1/2008 12:00:00 AM
Firstpage
185
Lastpage
188
Abstract
We report on the observation of LaGuerre-Gaussian (LG) beam profiles of photonic quantum ring (PQR) hole-type lasers. Naturally formed LG beams are highly valuable for optical tweezering applications, like transporting or manipulating DNA molecules. Various devices with different injection currents and hole diameters have been analyzed.
Keywords
elemental semiconductors; gallium arsenide; photonic crystals; quantum dot lasers; radiation pressure; DNA molecules; GaAs; LaGuerre-Gaussian emission properties; hole diameters; injection current; optical tweezering; photonic quantum ring hole-type lasers; LaGuerre–Gaussian; LaGurre-Gaussian; PQR hole-type lase; PQR hole-type lasers; Photonic Quantum Ring; optical trapping; optical tweezers; photonic quantum ring;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2007.908168
Filename
4359131
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