Room-temperature pulsed operation of a 1.5-μm GaInAsP/InP vertical cavity surface emitting laser

Author

Tadokoro, T. ; Okamoto, Hiroshi ; Kohama, Y. ; Kawakami, Tomoya ; Kurokawa, Takashi

Author_Institution

NTT Opto-Electron. Lab., Kanagawa

Volume

39

Issue

11

fYear

1992

fDate

11/1/1992 12:00:00 AM

Firstpage

2651

Lastpage

2652

Abstract

Summary form only given. Room-temperature operation of a current-injection near-1.55-μm GaInAsP/InP vertical-cavity surface emitting laser diode (VCSELD) was achieved. The double heterostructure was grown by metal-organic chemical vapor deposition on a (100) n-type InP substrate. The sample consisted of a 34-pair GaInAsP (λ_g=1.4 μm)/InP DBR, a 0.88-μm-thick undoped GaInAsP active layer, a 0.49-μm-thick InP cladding layer, a 0.22-μm-thick GaInAsP contact layer, and a p-side metal-dielectric hybrid mirror (Au/Cr and 3.5×Si/SiO₂)

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; semiconductor lasers; 1.55 micron; DBR; GaInAsP active layer; GaInAsP-InP; InP cladding layer; InP substrate; VCSELD; double heterostructure; metal-organic chemical vapor deposition; p-side metal-dielectric hybrid mirror; room temperature pulsed operation; vertical-cavity surface emitting laser diode; Indium phosphide; Laser excitation; Laser modes; Mirrors; Optical pulses; Pump lasers; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.163509

Filename

163509