Title :
Very high modulation efficiency of ultralow threshold current single quantum well InGaAs lasers
Author :
Chen, Tiffani R. ; Zhao, Bin ; Eng, L. ; Zhuang, Y.H. ; O´Brien, Jonathan ; Yariv, Amnon
Author_Institution :
Thomas J. Watson Sr Labs. of Appl. Phys., California Inst. of Technol., Pasadena, CA, USA
Abstract :
A record high current modulation efficiency of 5 GHz/ square root (mA) has been demonstrated in an ultralow threshold strained layer single quantum well InGaAs laser.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical modulation; semiconductor lasers; semiconductor quantum wells; III-V semiconductors, current modulation; InGaAs; modulation efficiency; single quantum well InGaAs lasers; threshold strained layer;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931016
