• DocumentCode
    947725
  • Title

    Deep traps in polysilicon solar cells

  • Author

    Criado, A. ; Alonso, B. ; Piqueras, J.

  • Author_Institution
    Universidad Autónoma de Madrid, Laboratorio de Semiconductores, Departamento de FÃ\xadsica Aplicada & Instituto de FÃ\xadsica del Estado Sólido (CSIC), Madrid, Spain
  • Volume
    14
  • Issue
    19
  • fYear
    1978
  • Firstpage
    622
  • Lastpage
    623
  • Abstract
    Anomalously high values of the ideality parameter n have been found in n+¿p diffused polysilicon solar cells indicating large generation-recombination rates in the space-charge layers. Two electron traps situated at 0.46 ± 0.03 eV and 0.12 ± 0.02 eV below the conduction-band edge seem to be responsible for these large generation-recombination currents. Because the concentration profiles of both levels are very similar, both can be attributed to the same defect.
  • Keywords
    electron traps; solar cells; conduction band edge; defect centres; electron traps; generation recombination rates; ideality parameter; polysilicon solar cells; space charge layers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780418
  • Filename
    4242595
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=947725