• DocumentCode
    947824
  • Title

    Computer studies on the widening of the avalanche zone and the decrease in efficiency of silicon X-band symmetrical double-drift impatt diodes at high current densities

  • Author

    Sridharan, M. ; Roy, Sandip Kumar

  • Author_Institution
    University of Calcutta, Centre of Advanced Study in Radio Physics and Electronics, Calcutta, India
  • Volume
    14
  • Issue
    19
  • fYear
    1978
  • Firstpage
    635
  • Lastpage
    637
  • Abstract
    A computer study of the field and current profiles of silicon X-band symmetrical d.d.r. impatt diodes is presented. The results show that there is considerable widening of the avalanche zone at high values of current density. This causes a sharp fall in the efficiency of the device at high current density after reaching a maximum.
  • Keywords
    IMPATT diodes; electronic engineering computing; Si; X band; avalanche zone; computer study; continuity equation; current density; current profiles; field profiles; symmetrical double drift IMPATT diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780427
  • Filename
    4242604
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=947824