Title :
Computer studies on the widening of the avalanche zone and the decrease in efficiency of silicon X-band symmetrical double-drift impatt diodes at high current densities
Author :
Sridharan, M. ; Roy, Sandip Kumar
Author_Institution :
University of Calcutta, Centre of Advanced Study in Radio Physics and Electronics, Calcutta, India
Abstract :
A computer study of the field and current profiles of silicon X-band symmetrical d.d.r. impatt diodes is presented. The results show that there is considerable widening of the avalanche zone at high values of current density. This causes a sharp fall in the efficiency of the device at high current density after reaching a maximum.
Keywords :
IMPATT diodes; electronic engineering computing; Si; X band; avalanche zone; computer study; continuity equation; current density; current profiles; field profiles; symmetrical double drift IMPATT diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780427
