DocumentCode :
947824
Title :
Computer studies on the widening of the avalanche zone and the decrease in efficiency of silicon X-band symmetrical double-drift impatt diodes at high current densities
Author :
Sridharan, M. ; Roy, Sandip Kumar
Author_Institution :
University of Calcutta, Centre of Advanced Study in Radio Physics and Electronics, Calcutta, India
Volume :
14
Issue :
19
fYear :
1978
Firstpage :
635
Lastpage :
637
Abstract :
A computer study of the field and current profiles of silicon X-band symmetrical d.d.r. impatt diodes is presented. The results show that there is considerable widening of the avalanche zone at high values of current density. This causes a sharp fall in the efficiency of the device at high current density after reaching a maximum.
Keywords :
IMPATT diodes; electronic engineering computing; Si; X band; avalanche zone; computer study; continuity equation; current density; current profiles; field profiles; symmetrical double drift IMPATT diodes;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19780427
Filename :
4242604
Link To Document :
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