Title :
Effect of neutron and gamma irradiation on the low-frequency noise in GaAs m.e.s.f.e.t.s
Author :
Moghe, S.B. ; Gutmann, R.J. ; Chudzicki, M.J. ; Borrego, J.M.
Author_Institution :
Rensselaer Polytechnic Institute, Electrical and Systems Engineering Department, Troy, USA
Abstract :
Low-frequency noise in GaAs m.e.s.f.e.t.s has been measured from 2 kHz to 1.5 MHz as a function of fast neutron fluence and gamma dose. From 5 × 1013 to 8 × 1014 n/cm2, the noise increases appreciably, with the noise enhancement from 2 to 10 kHz attributed to generation-recombination noise in the gate depletion layer and from 500 kHz to 1.5 MHz to channel trapping effects. There was comparably little change with gamma irradiation up to doses above 107 rad (Si).
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electron device noise; gallium arsenide; gamma-ray effects; neutron effects; GaAs MESFETs; channel trapping effects; fast neutron fluence; gamma dose; gamma irradiation; gate depletion layer; generation recombination noise; low frequency noise; neutron irradiation; noise enhancement;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780428
