DocumentCode
947835
Title
Effect of neutron and gamma irradiation on the low-frequency noise in GaAs m.e.s.f.e.t.s
Author
Moghe, S.B. ; Gutmann, R.J. ; Chudzicki, M.J. ; Borrego, J.M.
Author_Institution
Rensselaer Polytechnic Institute, Electrical and Systems Engineering Department, Troy, USA
Volume
14
Issue
19
fYear
1978
Firstpage
637
Lastpage
639
Abstract
Low-frequency noise in GaAs m.e.s.f.e.t.s has been measured from 2 kHz to 1.5 MHz as a function of fast neutron fluence and gamma dose. From 5 × 1013 to 8 × 1014 n/cm2, the noise increases appreciably, with the noise enhancement from 2 to 10 kHz attributed to generation-recombination noise in the gate depletion layer and from 500 kHz to 1.5 MHz to channel trapping effects. There was comparably little change with gamma irradiation up to doses above 107 rad (Si).
Keywords
III-V semiconductors; Schottky gate field effect transistors; electron device noise; gallium arsenide; gamma-ray effects; neutron effects; GaAs MESFETs; channel trapping effects; fast neutron fluence; gamma dose; gamma irradiation; gate depletion layer; generation recombination noise; low frequency noise; neutron irradiation; noise enhancement;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19780428
Filename
4242605
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