• DocumentCode
    947845
  • Title

    Determination of arbitrary doping profile in p¿n junctions

  • Author

    Tjapkin, D.A. ; Milanovi¿¿, V.B.

  • Author_Institution
    Institute of Physics, Faculty of Electrical Engineering, Beograd, Yugoslavia
  • Volume
    14
  • Issue
    19
  • fYear
    1978
  • Firstpage
    639
  • Lastpage
    640
  • Abstract
    Measurements of the depletion-layer capacitance as a function of both voltage and temperature enable the determination of an arbitrary profile for any ratio of Nd/Na. The proposed method is valuable for the determination of temperature dependences of relative permittivity and built-in voltage.
  • Keywords
    capacitance; doping profiles; p-n junctions; arbitrary doping profile; built in voltage; depletion layer capacitance; p-n junctions; relative permittivity; temperature dependences;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780429
  • Filename
    4242606
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=947845