Title :
Determination of arbitrary doping profile in p¿n junctions
Author :
Tjapkin, D.A. ; Milanovi¿¿, V.B.
Author_Institution :
Institute of Physics, Faculty of Electrical Engineering, Beograd, Yugoslavia
Abstract :
Measurements of the depletion-layer capacitance as a function of both voltage and temperature enable the determination of an arbitrary profile for any ratio of Nd/Na. The proposed method is valuable for the determination of temperature dependences of relative permittivity and built-in voltage.
Keywords :
capacitance; doping profiles; p-n junctions; arbitrary doping profile; built in voltage; depletion layer capacitance; p-n junctions; relative permittivity; temperature dependences;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780429
