Title :
Enhancement-mode ion-implanted InP f.e.t.s
Author :
Gleason, K.R. ; Dietrich, H.B. ; Bark, M.L. ; Henry, R.L.
Author_Institution :
Naval Research Laboratory, Washington, USA
Abstract :
Planar enhancement-mode InP f.e.t.s have been fabricated through the use of ion implantation and subsequent electron-beam lithography. Noise figures of 3.2 and 2.6 dB were achieved at 8 GHz with associated gains of 6.4 and 4.7 dB, respectively.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electron device noise; indium compounds; ion implantation; solid-state microwave devices; InP FETs; electron beam lithography; ion implantation; noise figures; planar enhancement mode InP FETs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780432
