Title :
High temperature photopumping of 1.55 mu m vertical cavity surface emitting lasers
Author :
Fisher, M.A. ; Davies, D.A.O. ; Elton, D.J. ; Hatch, C.B. ; Perrin, S.D. ; Reed, Jeff ; Reid, Ian ; Adams, M.J.
Author_Institution :
BT Labs., Ipswich, UK
Abstract :
Vertical cavity surface emitting lasers (VCSEL) emitting at long wavelengths, around 1.3 and 1.55 mu m, have potentially highly significant applications as low cost sources for optical fibre telecommunications applications because of simple fibre coupling and on-wafer testing. Low threshold photopumped lasing in GaInAsP/InP VCSEL in the 1.5 mu m wavelength region is described. Lasing was observed up to temperatures in excess of 80 degrees C.<>
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser transitions; optical communication equipment; optical pumping; semiconductor lasers; 1.5 to 1.55 micron; 14 to 85 degC; GaInAsP-InP; VCSEL; high temperature photopumping; long wavelengths; low cost sources; low threshold lasing; optical fibre telecommunications applications; surface emitting lasers; vertical cavity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19931032
