Title :
1.3 μm InAsyP1-y-InP strained-layer quantum-well laser diodes grown by metalorganic chemical vapor deposition
Author :
Kasukawa, Akihiko ; Namegaya, Takeshi ; Fukushima, Tom ; Iwai, Norihiro ; Kikuta, Toshio
Author_Institution :
Furukawa Electric Co., Ltd., Yokohama, Japan
fDate :
6/1/1993 12:00:00 AM
Abstract :
The authors have fabricated 1.3-μm InAsP-InP separate-confinement-heterostructure (SCH) strained-layer double-quantum-well (SL-DQW) laser diodes (LDs) by metalorganic chemical vapor deposition (MOCVD). A low threshold current density of 410 A/cm 2 was obtained. The CW threshold current was as low as 1.8 mA at 20°C, and maximum CW operating temperature of 120°C was obtained. These characteristics are almost the same as those of well-designed GaInAsP-InP SL-QW LDs. Further improvement of the characteristics of InAsP-InP LDs is expected by optimizing the device structure
Keywords :
III-V semiconductors; indium compounds; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 1.3 micron; 1.8 mA; 120 degC; 20 degC; CW threshold current; IR; InAsP-InP; LDs; MOCVD; double-quantum-well; laser structure optimisation; low threshold current density; maximum CW operating temperature; metalorganic chemical vapor deposition; separate-confinement-heterostructure; strained-layer quantum-well laser diodes; Chemical vapor deposition; Conducting materials; Diodes; Indium phosphide; Lattices; MOCVD; Quantum well lasers; Strain measurement; Temperature; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
