Title :
Suppression of Auger recombination effects in compressively strained quantum-well lasers
Author :
Lui, Wayne W. ; Yamanaka, Takayuki ; Yoshikuni, Yuzo ; Yokoyama, Kiyoyuki ; Seki, Shunji
Author_Institution :
NTT Corp., Kanagawa, Japan
fDate :
6/1/1993 12:00:00 AM
Abstract :
Based on detailed valence band structure, a Monte Carlo analysis of the Auger recombination effects in compressively strained quantum-well diode lasers has been carried out. The recombination current is found to increase with carrier density, but at a rate far less rapidly than the conventional n3-rule has suggested. At moderate carrier densities, the recombination current is also found to decrease exponentially with increasing strain
Keywords :
Auger effect; Monte Carlo methods; laser theory; semiconductor lasers; Auger recombination effects; Monte Carlo analysis; carrier density; compressively strained quantum-well lasers; detailed valence band structure; increasing strain; moderate carrier densities; recombination current; Capacitive sensors; Charge carrier density; Diode lasers; Monte Carlo methods; Quantum well lasers; Radiative recombination; Semiconductor diodes; Semiconductor lasers; Statistics; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
