Title :
Carbon-doped InGaP/GaAs/InGaP double heterojunction bipolar transistors
Author :
Chen, Y.K. ; Kapre, Ravi ; Tsang, W.T. ; Wu, Ming C.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ
fDate :
11/1/1992 12:00:00 AM
Abstract :
Summary form only given. The authors have fabricated the first carbon-doped InGaP/GaAs/InGaP double-heterojunction bipolar transistors which capitalize on the large ΔEv of the InGaP/GaAs heterointerface and the high doping concentration in GaAs by carbon atoms. With a 25-Å base setback layer, a current gain of 120 is obtained at Jc =2 kA/cm2. The nonalloy base contact is demonstrated to preserve a current gain of 20 to Ic=10 μA
Keywords :
III-V semiconductors; carbon; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; 10 muA; InGaP-GaAs:C-InGaP; base setback layer; current gain; double heterojunction bipolar transistors; high doping concentration; nonalloy base contact; Bipolar transistors; Carbon dioxide; Charge carrier processes; Chemicals; DH-HEMTs; Doping; Double heterojunction bipolar transistors; Electron mobility; Gallium arsenide; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
