Title :
The Deformable-Channel Model - A New Approach to High-Frequency MESFET Modeling
Author :
Crowne, F.J. ; Eskandarian, A. ; Sequeira, H.B. ; Jakhete, R.
fDate :
12/1/1987 12:00:00 AM
Abstract :
High-frequency small-signal circuit parameters are evaluated for a saturated-channel MESFET by including transit-time effects in a rigorous way through a study of induced shape changes in the saturated-channel region. Results agree well with empirical equivalent-circuit parameters for a physical MESFET.
Keywords :
Capacitance; Deformable models; Electron mobility; Equivalent circuits; Gallium arsenide; MESFET circuits; Material properties; Shape; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1987.1133838
