• DocumentCode
    947953
  • Title

    n-channel inversion-mode InP m.i.s.f.e.t.

  • Author

    Lile, D.L. ; Collins, D.A. ; Meiners, L.G. ; Messick, L.

  • Author_Institution
    Naval Ocean Systems Center, Electronic Material Sciences Division, San Diego, USA
  • Volume
    14
  • Issue
    20
  • fYear
    1978
  • Firstpage
    657
  • Lastpage
    659
  • Abstract
    Capacitance/voltage and m.i.s.f.e.t. inversion-mode f.e.t. data are reported for p-type InP. It is shown that the surface of this material appears to be inverted at zero gate bias and that good inversion-mode (normally-off) device behaviour is possible.
  • Keywords
    III-V semiconductors; insulated gate field effect transistors; MISFET inversion mode FET data; capacitance/gate voltage curves; output characteristics; p-type InP;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780441
  • Filename
    4242627
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=947953