• DocumentCode
    947977
  • Title

    Low-frequency noise in ideal GaAs Schottky-barrier diodes

  • Author

    Sisson, M.J. ; Hansom, A.M. ; Grant, Alex J. ; White, Amanda M. ; Day, B.

  • Author_Institution
    General Electric Company Ltd., Hirst Research Centre, Wembley, UK
  • Volume
    14
  • Issue
    20
  • fYear
    1978
  • Firstpage
    662
  • Lastpage
    663
  • Abstract
    Large-area Schottky diodes have been made on epitaxial GaAs produced by liquid-phase, alkyl and trichloride-vapour-phase techniques. D.L.T.S. transient-capacitance experiments failed to detect electron traps in the material in each case. A very low level of low-frequency excess noise was found in diodes with ideal current/voltage characteristics, but devices with excess current at low bias were noisier.
  • Keywords
    Schottky-barrier diodes; electron device noise; electron traps; GaAs Schottky barrier diodes; current/voltage characteristics; deep level transient spectroscopy transient capacitance experiments; epitaxial GaAs; low frequency noise; noise temperature ratio;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780444
  • Filename
    4242631
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=947977