Title :
Novel f.e.t. power oscillator
Author_Institution :
Microwave Semiconductor Corp., Somerset, USA
Abstract :
An X-band GaAs f.e.t. oscillator is described that uses a novel configuration, designated `reverse-channel oscillator¿. This provides output powers of up to 0.94 W at 8 GHz and efficiencies as high as 37%. At a higher frequency this configuration provided approximately 300 mW output at 17.5 GHz.
Keywords :
electron device noise; field effect transistor circuits; microwave oscillators; solid-state microwave circuits; FET power oscillator; X-band GaAs FET oscillator; reverse channel oscillator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780451
