Title :
Implanted Si m.o.s.f.e.t.s for high-speed applications
Author :
Niggebr¿¿gge, U. ; Tsironis, Christos ; Filensky, W. ; Balk, P. ; Beneking, H.
Author_Institution :
Technical University of Aachen, Institute of Semiconductor Electronics, Aachen, West Germany
Abstract :
Si m.o.s.f.e.t.s with a channel length of 0.8 ¿m have been fabricated using boron implantation to adjust the threshold voltage. With microwave design appropriate to keeping the parasitics small, fmax values between 10 and 12 GHz are realised also with ion implantation. Large-signal switching times of 48 ps, small-signal switching times of 44 ps and delay times of 50 ps have been achieved.
Keywords :
boron; insulated gate field effect transistors; ion implantation; silicon; solid-state microwave devices; Si:B; delay times; insulated gate field effect transistors; ion implantation; signal switching times; solid state microwave devices; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780465
