Title :
High speed 1.3 μm InGaAsP Fabry-Perot lasers for digital and analog applications
Author :
Cheng, Wood-Hi ; Mar, Alan ; Bowers, John E. ; Huang, R.T. ; Su, Chin B.
Author_Institution :
Tacan Corp., Carlsbad, CA, USA
fDate :
6/1/1993 12:00:00 AM
Abstract :
The digital and analog lightwave transmission characteristics of p-doped active layer 1.3-μm InGaAsP Fabry-Perot (FP) lasers with semi-insulating current blocking layers were investigated experimentally. For a 1.2-Gb/s digital lightwave transmission system, it was found that the pulse jitter and the resulting power penalty were strongly dependent on the carrier lifetime of the lasers. This indicates that p-doped active layer FP lasers with decreased carrier lifetimes may be usable for a wider range of gigabit lightwave applications than previously considered. For analog lightwave applications, p-doped active layer FP lasers showed a 3-dB modulation bandwidth of 22 GHz for CW operation. These results suggest that this structure is suitable for use in both multigigabit digital and very-high-speed analog lightwave transmission systems
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical communication equipment; semiconductor lasers; 1.2 Gbit/s; 1.3 micron; 22 GHz; InGaAsP; InGaAsP Fabry-Perot lasers; analog lightwave transmission characteristics; carrier lifetime; continuous wave operation; digital lightwave transmission system; modulation bandwidth; p-doped active layer; power penalty; pulse jitter; semi-insulating current blocking layers; very-high-speed analog lightwave transmission systems; Bandwidth; Charge carrier lifetime; Fabry-Perot; Fiber lasers; Jitter; Laser feedback; Laser modes; Masers; Power lasers; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
