Title :
Amorphous-layer formation in GaAs by ion implantation
Author_Institution :
National Tsing Hua University, Department of Electrical and Power Engineering, Hsinchu, Republic of China
Abstract :
Optical absorption is measured in situ a few seconds after 60 keV ion implantation to study the amorphous-layer formation in GaAs. The results indicate that the energy required to transfer the crystalline state to amorphous state during room-temperature implantation is approximately 1.7×1024 eV/cm3 or 40 eV per atom, which is independent of ion species.
Keywords :
III-V semiconductors; amorphisation; amorphous semiconductors; gallium arsenide; impurity and defect absorption spectra of inorganic solids; infrared spectra of inorganic solids; ion implantation; GaAs; III-V semiconductors; IR spectra; amorphous layer formation; ion implantation; optical absorption;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780469
