• DocumentCode
    948217
  • Title

    Amorphous-layer formation in GaAs by ion implantation

  • Author

    Lin, Min-Shyong

  • Author_Institution
    National Tsing Hua University, Department of Electrical and Power Engineering, Hsinchu, Republic of China
  • Volume
    14
  • Issue
    21
  • fYear
    1978
  • Firstpage
    695
  • Lastpage
    697
  • Abstract
    Optical absorption is measured in situ a few seconds after 60 keV ion implantation to study the amorphous-layer formation in GaAs. The results indicate that the energy required to transfer the crystalline state to amorphous state during room-temperature implantation is approximately 1.7×1024 eV/cm3 or 40 eV per atom, which is independent of ion species.
  • Keywords
    III-V semiconductors; amorphisation; amorphous semiconductors; gallium arsenide; impurity and defect absorption spectra of inorganic solids; infrared spectra of inorganic solids; ion implantation; GaAs; III-V semiconductors; IR spectra; amorphous layer formation; ion implantation; optical absorption;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19780469
  • Filename
    4242667
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=948217