Title :
High-speed operation of strained InGaAs/InGaAsP MQW lasers under zero-bias condition
Author :
Odagawa, Tetsufumi ; Nakajima, Kaoru ; Tanaka, Kazuhiro ; Nobuhara, Hiroyuki ; Inoue, Tadao ; Okazaki, Niro ; Wakao, Kiyohide
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
6/1/1993 12:00:00 AM
Abstract :
5 High-speed zero-bias operation of 1.5-μm In0.62Ga 0.38As/In compressively-strained-MQW (multi-quantum-well) lasers at high temperatures is reported. This is achieved by optimizing the SCH (separate confinement heterostructure) composition to minimize the lasing delay time. Using a laser with an optimized SCH composition, zero bias 1-Gb/s modulation at 70°C with a large eye opening time of 700 ps is demonstrated. In the optimization, strong carrier lifetime dependence on the SCH composition is observed. To see this dependence more precisely, the SCH structure dependence of effective carrier recombination coefficient B, which is an essential parameter for the carrier lifetime, has been experimentally investigated
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical modulation; semiconductor lasers; stress effects; 1 Gbit/s; 1.5 micron; 70 degC; In0.62Ga0.38As-In; SCH structure dependence; carrier lifetime dependence; composition; compressively strained multi-quantum well lasers; effective carrier recombination coefficient; eye opening time; high speed zero bias operation; lasing delay time; optimization; separate confinement heterostructure; strained InGaAs-InGaAsP lasers; zero-bias condition; Charge carrier lifetime; Circuits; Delay effects; Diode lasers; Epitaxial growth; Indium gallium arsenide; Quantum well devices; Quantum well lasers; Temperature; Threshold current;
Journal_Title :
Quantum Electronics, IEEE Journal of
