• DocumentCode
    948245
  • Title

    New ceramic chambers for the HLS storage ring

  • Author

    Shang, L. ; Wang, X.Q. ; Jiang, D.M. ; Zhao, F. ; Wang, L.

  • Author_Institution
    Nat. Synchrotron Radiat. Lab., Univ. of Sci. & Technol. of China, Hefei, China
  • Volume
    51
  • Issue
    1
  • fYear
    2004
  • Firstpage
    245
  • Lastpage
    249
  • Abstract
    The new injection bump system of Hefei light source (HLS) storage ring is firstly introduced. The new system set a strict error limit to the rise time delay of the pulsed magnetic field, which is caused by the coating of the ceramic chamber. The error allowance is studied and the results are summarized. A new method of coating ceramic chambers was developed. The method, which employs Mo metallization techniques, is quite different from existing methods. Important issues of coating these chambers are presented. A unique, two-coil pulsed magnetic field measurement system was set up. Rise time delay of the pulsed field at different positions inside the ceramic chambers was measured. The rise time deviations inside a pair of chambers proved to be within the range of ±4 ns. A vacuum pressure of 2×10-8 Pa of the ceramic chambers was obtained after the installation in the storage ring. The chambers performed well. An average injection rate of 2-6 mA/s was obtained.
  • Keywords
    ceramics; coating techniques; delays; electron accelerators; magnetic field measurement; metallisation; particle beam dynamics; particle beam injection; storage rings; vacuum techniques; 2E-8 Pa; Hefei light source storage ring; Mo metallization techniques; ceramic chamber coating; injection bump system; rise time deviations; time delay; two-coil pulsed magnetic field measurement system; vacuum pressure; Ceramics; Coatings; Delay effects; High level synthesis; Light sources; Magnetic field measurement; Magnetic fields; Metallization; Pulse measurements; Storage rings;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2004.825097
  • Filename
    1282097