Title :
Numerical simulation of a forward-biased p-i-n structure with band-to-band Auger recombination
Author :
Freidin, B. ; Velmre, E.
Author_Institution :
Tallinn Polytechnic Institute, Electronics Department, Tallinn, USSR
Abstract :
A modification of the iterative scheme of Seidman and Choo is described. The proposed method is suited for the modelling of processes in semiconductor structures including Auger recombination. Some results of calculations are given.
Keywords :
Auger effect; electron-hole recombination; iterative methods; p-n junctions; Seidman and Choo; band to band Auger recombination; electrons and hole equation; forward biased p-i-n structure; iterative scheme; mobilities; modelling; numerical simulation; semiconductor structures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19780473
