DocumentCode
948266
Title
A new failure mechanism and its improvement on gate oxide reliability at field edge by LOCOS isolation
Author
Takahashi, Masaharu ; Uchida, Hironaga ; Nagatomo, Yoshiki ; Hirashita, N. ; Ino, M.
Author_Institution
Oki Electric Industry Co. Ltd., Tokyo
Volume
39
Issue
11
fYear
1992
fDate
11/1/1992 12:00:00 AM
Firstpage
2670
Lastpage
2671
Abstract
Summary form only given. A new failure mechanism of gate oxide at the field oxide edge by LOCOS isolation has been found. The gate oxide reliability is degraded by the buildup of positive charges in addition to the thinning. Both effects can be reduced by a high-temperature annealing after gate oxidation and wet gate oxidation
Keywords
annealing; failure analysis; insulated gate field effect transistors; oxidation; reliability; semiconductor technology; LOCOS isolation; failure mechanism; field edge; gate oxidation; gate oxide reliability; high-temperature annealing; positive charge build-up; wet gate oxidation; Circuit testing; Dielectrics; Failure analysis; Feedback circuits; Implants; Inverters; Logic circuits; Logic devices; SONOS devices; Waveguide transitions;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.163542
Filename
163542
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