Title :
Partly gain-coupled 1.55 μm strained-layer multiquantum-well DFB lasers
Author :
Li, Guo Ping ; Makino, Toshihiko ; Moore, Ron ; Puetz, Norbert ; Leong, Kin-Wai ; Lu, Hanh
Author_Institution :
Bell-Northern Res., Ottawa, Ont., Canada
fDate :
6/1/1993 12:00:00 AM
Abstract :
1.55-μm gain-coupled InGaAsP-InP distributed feedback (DFB) lasers which use a strained-layer multi-quantum-well (MQW) active grating for a mixed index and gain coupling have been fabricated and studied. The lasers exhibit distinct longitudinal-mode behaviour due to gain-coupling effects, including a high single-mode yield. Cavity length dependence of the mode behavior has been experimentally studied and simulated using a transfer-matrix method. Both experimental and theoretical results indicate that the shorter cavity lasers with the present structure have higher κgainL/κ inde ratios and wider Fabry-Perot mode spacing than the longer cavity ones; these features enable the shorter cavity lasers to have a high single-mode yield (90%) and a high side-mode-suppression ratio (55 dB)
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser modes; laser transitions; semiconductor lasers; 1.55 micron; Fabry-Perot mode spacing; cavity length dependence; gain coupled InGaAsP-InP distributed feedback lasers; gain-coupling effects; longitudinal-mode behaviour; mixed index; side-mode-suppression ratio; single-mode yield; strained-layer multiquantum-well DFB lasers; strainer layer multi-quantum-well active grating; transfer-matrix method; Coatings; Distributed Bragg reflectors; Distributed feedback devices; Gratings; Laser feedback; Laser modes; Laser theory; Optical coupling; Reflectivity; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of